摘要
采用 SOI/CMOS工艺成功地研制出沟道长度为 0 .8μm的 SOI器件和环振电路 ,在 5V和 3V电源电压时 51级环振的单门延迟时间分别为 82 ps和 2 81 ps,速度明显高于相应的体硅电路 .由于采用硅岛边缘注入技术 ,寄生边缘管得到较好的抑制 .对沟道宽度对 SOI器件特性的影响进行了讨论 .实验表明 SOI器件是高速和低压低功耗电路的理想选择 .
High\|performance SOI devices and ring oscillators with 0 8μm channel length are fabricated and characterized. The propagated delays per stage of the ring oscillator at 3V and 5V supply voltage are 82ps and 281ps respectively, which is much higher than that of the corresponding bulk circuits. The parasitic edge transistor is well suppressed due to the adoption of mesa edge implantation. The influence of the channel width on the device performance is discussed as well. The experimental results indicate that SOI devices are the ideal choice for the high\|speed,low\|voltage and low\|power circuits.
关键词
SOI
MOS器件
环振电路
SOI
MOS
high speed
ring\|oscillator
fabrication
