半导体材料放电切割弯丝过冲控制研究

Research on Control of the Bent Wire Electrode in the WEDM of Semicondutor

提出了一种基于电极丝位置检测的高阻半导体放电切割弯丝过冲控制方法。在对高阻半导体放电切割加工特性分析研究的基础上,分析了传统电火花线切割放电间隙取样方法对高阻半导体加工进给控制存在的问题,提出以测量加工过程中电极丝空间位置变化为基础的弯丝过冲检测方法,并设计了相应的检测系统。采用该系统对高阻半导体单晶硅进行了放电切割加工,试验表明:该检测系统能有效控制放电过程中出现的弯丝过冲现象,提高了切割效率。

This paper puts forward a method, which is based on the position detection of wire electrode, to control bent wire electrode in the WEDM of high resistance semiconductor. At the basis of the research on the properties of wire electrical discharge machining of high resistance silicon, it was found that the traditional discharge gap sampling method is not suitable for controlling the feeding speed of WEDM of high resistance semiconductor. A method that can detect the bent wire electrode according to the position of the electrode in the process was proposed. And the corresponding system was designed. The experiment shows that the system can make a good control for the bent wire elec- trode in the discharge process and improve the efficiency.