0.5μm部分耗尽SOI MOSFET中的寄生双极效应

The Parasitic Bipolar Effects of 0.5 μm Partially Depleted SOI MOSFET

0.5μm部分耗尽SOI MOSFET的寄生双极效应严重影响了SOI器件和电路的抗单粒子和抗瞬态γ辐射能力。文中显示,影响0.5μm部分耗尽SOI NMOSFET寄生的双极器件特性的因素很多,包括NMOSFET的栅上电压、漏端电压和体接触等,尤其以体接触最为关键。在器件处于浮体状态时,0.5μm SOI NMOSFET的寄生双极器件很容易被触发,导致单管闭锁。因此,在设计抗辐射SOI电路时,需要尽量降低SOI NMOSFET寄生双极效应,以提高电路的抗单粒子和抗瞬态γ辐射能力。

SOI circuits sensitivity to single event upset（SEU） and transient γ-ray radiation is reduced due to parasitic bipolar effects of SOI MOSFET.In this paper,0.5 μm partially depleted SOI NMOSFET parasitic bipolar effects related to gate voltage,drain voltage,and body contact are given.Parasitic bipolar effects are easily trigged when 0.5 μm SOI NMOSFET body is floated,and then single transistor latch-up is induced.Therefore,it is necessary to reduce parasitic bipolar effects of SOI NMOSFE in order to improve SOI device sensitivity to SEU and transient γ-radiation.