N∶ZnO薄膜的受主性质研究

Research on Acceptor Nature of the N∶ZnO Thin Films

使用溶胶-凝胶法制备N∶ZnO薄膜,用X射线衍射仪(XRD)对晶体结构进行表征,用扫描电子显微镜(SEM)观察薄膜表面形貌,用荧光光谱仪测量低温(8K)及变温条件(8～200K)下的光致发光(PL)光谱。分析了各个发射峰的形成机理,通过薄膜缺陷态发光和受主能级的关联性,计算出了N作为受主所需电离能的大小在0.255～0.31eV范围内。研究结果为以后P型ZnO薄膜的制备和研究提供了依据。

The sol-gel process on N∶ZnO films is discussed.Crystal structure is characterized by using X-ray diffraction（XRD）.The surface morphology is observed by scanning electron microscope（SEM）,and the PL spectrum from 8 to 200 K is performed by fluorescence spectrometer,forming origins of whose peaks are analyzed.Ionization energy of 0.255～0.31 eV of N as the acceptor have been calculated through the correlation of defect state and acceptor level.A basis for the preparation and study of p-type ZnO films is provided.