摘要
采用二维法向量作为分量,加权求和近似得到三维网格点上的单位法向量,将经典的二维线算法改进为三维形式。综合SU-8胶光刻过程中衍射、吸收率随光刻胶深度的变化及交联显影等各种效应,应用该三维线算法对SU-8化学放大胶进行光刻过程三维建模。该模型对被加工表面演化过程的模拟较为精确,可在实际应用中对SU-8胶的光刻模拟结果进行有效预测。
The 2-D normal vectors are used as the components of a 3-D normal vector to approximately get the evolvement direction of the surface node.Considering the diffraction of SU-8 photoresist lithography process,cross-linking effect of absorption rate changing with the depth and photoresist evolvement,an improved 3-D model for SU-8 UV lithography process simulation is developed using the novel 3-D string algorithm.The surface evolution process can be described and simulate effectively,which can be used to predict the 3-D fabrication profiles of SU-8 lithography process in practice.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2012年第2期184-187,共4页
Research & Progress of SSE
基金
东南大学MEMS教育部重点实验室开放研究基金资助项目
中央高校基本科研业务费专项资金资助项目(2011HGQC0997)
浙江省自然科学基金资助项目(Y12F020100)
关键词
线算法
三维模拟
SU-8胶
模型
string algorithm
3-D simulation
SU-8 lithography process
model
