摘要
实现了InGaAs/InGaAlAs应变补偿量子阱激光器的室温脉冲激射,激射波长为156μm,阈值电流密度小于185kA/cm2,脊波导结构的激光器最低阈值电流为35mA。
The pulsed operation InGaAs/InGaAlAs strain compensated multiple quantum well lasers at room temperature is implemented. The working wavelength is 1.56μm, the threshold current density is less than 1.85kA/cm 2, and the threshold current is 35mA for ridge waveguide structure. The incorporation of compensated strain, which make the more well design applicable, leads to an obvious improvement on the device temperature characteristic.
出处
《高技术通讯》
EI
CAS
CSCD
2000年第2期50-52,共3页
Chinese High Technology Letters
基金
国家自然科学基金!资助项目 ( 6 94870 0 4)
