量子尺寸效应对InGaN/GaN量子点中的类氢杂质态的影响

Quantum size effect on hydorgenic impurity states in zinc-blende InGaN/GaN quantum dot

在有效质量近似下,运用变分法研究了量子尺寸效应对闪锌矿InGaN/GaN量子点中类氢杂质的施主束缚能的影响.数值结果显示,类氢杂质的施主束缚能在很大程度上依赖于杂质位置和量子点结构参数,当杂质位于量子点中心时,施主束缚能最大;当量子点尺寸增加时,位于该量子点任一位置处的杂质束缚能均降低.

Based on the effective-mass approximation,the quantum size effect on binding energy of hydorgenic impurity states in zinc-blende InGaN/GaN quantum dot was investigated by means of variational method.Numerical results showed that the donor binding energy of hydorgenic impurity depended on the impurity position and quantum dot structure in a large extent.The donor binding energy of impurity located at the center of quantum dot was the largest.Impurity donor binding energy decreased when quantum dot height and radius increase for any impurity position.