辉光放电a-SiN_x:H薄膜光电导特性的研究

STUDY ON PHOTOCONDUCTIVITY PROPERTIES OF GD a-SiN_2: H FILMS

本文讨论了辉光放电(GD)制备的a-SiN_x:H光电导随入射光子能量、光强和温度的变化关系,定量地考察了带隙、带尾态的宽度、带隙内悬键态密度与氮含量的关系。提出了N原子在非晶硅网络中一种可能的结合方式,使用修正后的Mott-CFO隙态分布模型和Rose·Shocklewy-Simmons公式,数值计算了光电导随温度的变化关系。与实验比较,给出了隙态分布的位置、宽度和高度,也给出了电子迁移率和复合系数。理论计算与实验测量符合较好。

This paper presents the photoconductivity of amorphous SiN. H films prepared by means of glow discharge as a function of photon energy. intonsity of incident light, and temperature and investigates quantitatively the relationship of the band gap, tail width, density of states of dangling bonds and the content of nitrogen atoms in the films. The relationship between photoconductivity and temperature was obtained by use of the modified Mott-Cohen-Fritzsche-Ovshinsky(M-CFO) model of gap states, the Rose-Shockley-Simmons' formula and a possible configuration of nitrogen atoms in the network of the film. Compared with the experimental results, the position, width and peak of distribution of states in gap, and also the electron mobility, cross section ot capture are obtained. All the calculated results conform with those of measurements.