一种新颖的空穴阻挡材料的合成、表征与空穴阻挡特性研究

Synthesis, characterization and study of hole-blocking performance of novel hole-blocking material

利用Yamamoto偶联反应合成了间位连接双氧桥联的联苯衍生物(MDBP)。循环伏安法及吸收光谱分析表明MDBP具有较低的HOMO能级(6.12 eV)和较高的氧化电位(2.5 V);利用结构ITO/NPB/MDBP/Alq3/Li/Al的多层器件,探讨了MDBP厚度、电压对空穴阻挡性能的影响,结果表明较高电压下该材料对空穴的阻挡能力与BCP相当。并利用MDBP为空穴阻挡层制备了白光器件。

MDBP （meta-linkagedouble-oxygenbridgedbiphenylderivatives） is synthesized in terms ofYamamoto reaction. The analyses of cyclic voltammetry and Uv-Vis spectra indicates that MDBP has lower HOMO level （-6.12 eV） and higher oxidation potential （-2.5 eV）. The effect of thickness of MDBP layer and driving voltage on hole-blocking performance are discussed using multilayer organic light-emitting devices. The results indicate that the ability of blocking holes of MDBP layer depends on its thickness and driving voltage. In addition, white-tight-emitting devices based on MDBP as hole-blocking laye is prepared, and its performance is also discussed.