电化学沉积法制备Co-ZnO薄膜及其室温铁磁性

Electrodeposited Fabrication and Room Temperature Ferromagnetism of Co-doped ZnO Films

用电化学沉积方法,在锌片上成功制备出了Co掺杂ZnO稀磁半导体薄膜。XRD研究表明,Co-ZnO薄膜均为六方纤锌矿结构,没有出现与Co相关的杂质相。由XPS测量结果可知,钴离子在ZnO薄膜中以+2价的形式存在,替换了ZnO晶格中部分Zn2+。通过样品室温铁磁性测量结果进一步验证了Co2+取代了ZnO晶格中Zn2+的格位。

Co doped ZnO thin films are successfully synthesized on polycrystalline Zn foils via an electrodeposition route in this paper. The XRD results show that all films are ZnO wurtzite without impurity phases. The XPS spectra show that the Co ions have a chemical valence of ＋2 ,and the doped Co2＋ partially substitutes Zn2＋ in ZnO lat-tice. Furthmore, ferromagnetism at room temperature shows Co3＋ ions doped into the ZnO crystal lattices by substituting Zn2＋ ions.