硅纳米线研究进展概述

Research Progress of Silicon Nanowires

硅纳米线由于量子限制效应,表现出与体材料不同的物理性质。文章概述了国内外对硅纳米线结构、形貌、成分和力学、电学等物理特性的表征研究的最新进展,揭示了硅纳米线尺寸、表面结构和粒子这三者与性能之间的关系。最后介绍硅纳米线表征研究成果在纳米器件上的应用,并对硅纳米线制备技术和表征技术在未来的发展做了展望。

Silicon nanowires （SiNWs） exhibited physical properties different from that of bulk materials due to quan- tum restriction effect. The latest progress at home and abroad in the characterization research work of SiNWs, which in- volves structure, morphology, composition, mechanical, electrical properties and so on, was outlined. Relations between sizes, surface structure, particles and properties of SiNWs were revealed. Characterization research achievements of SiN- Ws in the application of nano devices were introduced and the development of fabrication and characterization technology in the future was discussed.