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深紫外宽入射角范围增透膜设计与制备 被引量:1

Deep-ultraviolet Antireflection Coatings for Wide Angle of Incidence Applications
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摘要 在大数值孔径深紫外光学系统中,需要使用宽入射角范围的增透膜光学元件。选择LaF3和MgF2两种镀膜材料,设计了适用于深紫外宽入射角范围的三层、五层和七层三种增透膜系。实验使用热舟蒸发在熔融石英基底上镀制了设计的薄膜,并用紫外分光光度计对其光谱性能进行了测试,得到了在宽入射角范围内具有较高透过率的深紫外增透膜元件。双面镀五层增透膜系的熔石英基片在0°?55°入射角内的剩余反射率小于2.5%,在0°?20°入射角内的透过率大于98%。 In a large Numerical Aperture (NA) deep Ultraviolet (DUV) optical system, Antireflection (AR) coated optical components with very wide Angle of Incidence (AOI) are used. By employing LaF3/MgF2 as the material combination, we designed three AR thin films that can be Used for coating on the wide-angle DUV components with 3-, 5-, and 7-layer structures. Experimentally, we deposited thin films on fused silica substrates by using the thermal boat evaporation, and then measured their spectral properties with a DUV spectrophotometer. The experimental results indicate that the DUV AR Coatings with high transmittance in a wide range of AOI were achieved. The residual reflectance of a double-side five-layer AR coated fused silica was measured to be less than 2.5% when AOI varied from 0° to 55°, meanwhile the transmittance was measured to be larger than 98% when AOI varied from 0° to 20°.
出处 《光电工程》 CAS CSCD 北大核心 2012年第5期13-17,共5页 Opto-Electronic Engineering
关键词 深紫外 增透膜 宽入射角范围 剩余反射率 deep ultraviolet antireflection coatings wide angle of incidence residual reflectance
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  • 1尚淑珍,邵建达,沈健,易葵,范正修.退火对电子束热蒸发193nm Al_2O_3/MgF_2反射膜性能的影响[J].物理学报,2006,55(5):2639-2643. 被引量:7
  • 2Chen C T, Wang G L, Wang X Y and Xu Z Y 2009 Appl. Phys. B 97 9.
  • 3Xu Z Y 2009 Chin. J. Lasers 36 1619.
  • 4Wang G, Wang X, Zhou Y, Chen Y, Li C, Zhu Y, Xu Z and Chen C 2008 Appl. Phys. B 91 95.
  • 5Zhang H, Wang G, Cuo L, Geng A, Bo Y, Cui D, Xu Z, Li R, Zhu Y, Wang X and Chen C 2008 Appl. Phys. B 93 323.
  • 6Zhang X, Wang Z, Wang G, Zhu Y, Xu Z and Chen C 2009 Opt. Lett. 34 1342.
  • 7Liu M, Lee C, Liao B, Kaneko M, Nakahira K and Tak,uno Y 2008 Appl. Opt. 47 C214.
  • 8Yoshida T, Nishimoto K, Sekine K and Etoh K 2006 Appl. Opt. 45 1375.
  • 9Iwahori K, Fruta M, Taki Y, Yamamura T and Tanaka A 2006 Appl. Opt. 45 4598 % DOI: 10.1364/AO.45.004598.
  • 10Bischoff M, Sode M, Gaebler D, Bernitzki H, Zaczek C, Kaiser N and Tuennermann A 2008 Proc. SPIE 7101 71010L.

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