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ZnCl_2-assisted Synthesis of ZnSe Polycrystal

ZnCl_2-assisted Synthesis of ZnSe Polycrystal
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摘要 A chemical-assisted element direct-reaction method is developed to synthesize ZnSe compound semiconductor material at a relatively low temperature (-1000 ℃). ZnSe polycrystal was obtained in the closed-tube systems with Zn-Se, Zn-Se-Zn(NHa)2CI2, ZnoSe-NH4CI and Zn-Se-ZnCI2. The as-synthesized samples were tested by X-ray diffraction (XRD), thermogravimetric analysis (TGA) and analyzed by thermodynamic numerical method. The results demonstrate that the synthesis efficiency is higher than 99.96% for Zn-Se-ZnCl2 system at around 1000 ℃ for 3 weeks. It also exhibits that not only temperature, but also low apparent ratio of volume and surface area of the source materials and higher ZnCl2 content are required to achieve high synthesis efficiency. A SeCI transporting reaction synthesis process is proposed based on the thermodynamic analysis. A chemical-assisted element direct-reaction method is developed to synthesize ZnSe compound semiconductor material at a relatively low temperature (-1000 ℃). ZnSe polycrystal was obtained in the closed-tube systems with Zn-Se, Zn-Se-Zn(NHa)2CI2, ZnoSe-NH4CI and Zn-Se-ZnCI2. The as-synthesized samples were tested by X-ray diffraction (XRD), thermogravimetric analysis (TGA) and analyzed by thermodynamic numerical method. The results demonstrate that the synthesis efficiency is higher than 99.96% for Zn-Se-ZnCl2 system at around 1000 ℃ for 3 weeks. It also exhibits that not only temperature, but also low apparent ratio of volume and surface area of the source materials and higher ZnCl2 content are required to achieve high synthesis efficiency. A SeCI transporting reaction synthesis process is proposed based on the thermodynamic analysis.
出处 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2012年第4期373-378,共6页 材料科学技术(英文版)
基金 supports of the National Natural Science Foundation of China the National 973 Project (No. 2011CB610406) the Research Fund of Young Teachers for the Doctoral Program of Higher Education of China (No. 20106102120016) the Independent Subject of State Key Laboratory of Solidification Processing (74-QP-2011)
关键词 CRYSTALLITES Growth from vapor Zinc compounds Semiconducting II-VI materials Crystallites Growth from vapor Zinc compounds Semiconducting II-VI materials
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  • 1ZONG Fujian1, MA Honglei1, XUE Chengshan2, ZHUANG Huizhao2, ZHANG Xijian1, MA Jin1, JI Feng1 & XIAO Hongdi1 1. School of Physics and Microelectronics, Shandong University, Jinan 250100, China,2. Institute of Semiconductor, Shandong Normal University, Jinan 250014, China.Synthesis and structural characterization of Zn_3N_2 powder[J].Science China(Physics,Mechanics & Astronomy),2005,48(2):201-210. 被引量:2

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