期刊文献+

室温铁磁性蒲公英状氧化锌的制备及生长机理研究

Fabrication and Growth Mechanism of Dandelion-like Zinc Oxide with Room-temperature Ferromagnetism
下载PDF
导出
摘要 以锌粉、醋酸锌和氢氧化钠为原料,采用水热法制备出了具有结构性缺陷的蒲公英状ZnO。通过X射线衍射仪、扫描电子显微镜、荧光光谱仪和超导量子干涉仪对产物的结构形貌和光学性能及磁学性能进行了表征,并对其生长机理进行了探讨。研究表明,蒲公英状氧化锌为六方纤锌矿结构,由许多顶端为锥尖形的棒自组装而成;其荧光本征发射峰在388nm处,属于激子跃迁发射。在波长450~492nm处所观察到的3个弱蓝光峰是由锌填隙原子中的电子到价带顶的跃迁所致;在波长492~580nm范围内出现的较为宽泛的绿光发射峰根源于电子从导带底到氧错位缺陷能级间的跃迁。蒲公英状ZnO中存在的结构性缺陷使得原本呈现抗磁性的ZnO具有了室温铁磁性,从而可作为一种稀磁半导体应用到自旋电子学领域中。 Dandelion-like ZnO with structural defects were fabricated by a hydrothermal method,using zinc powder,zinc acetate,and sodium hydroxide as raw materials.Phase structures,morphologies,optical,and magnetic properties of the products were characterized by X-ray diffraction(XRD),scanning electron microscopy(SEM),fluorescence spectrometer,and Quantum Design SQUID MPMS-XL7 magnetometer.The growth mechanism was also investigated.The results show that the ZnO products belong to a hexagonal wurtzite structure,and are composed of numerous cone-tipped ZnO nano-rods.The intrinsic ultraviolet emission peak at 388 nm represents the exciton transition emission.Three evident blue emission peaks,found at the range from 450 to 492 nm,could be attributed to the transition of electrons in interstitial zinc atom on top of the valence bands.The broad green emission peak,located at 492—580 nm,may result from the electron-transition at the bottom of the conduction bands to the energy levels of oxygen mismatch defects.The structural defects endow these dandelion-like ZnO nano-rods with room-temperature ferromagnetism rather than diamagnetism,giving promise in applications of dilute magnetic semiconductor.
出处 《青岛科技大学学报(自然科学版)》 CAS 北大核心 2012年第2期111-114,120,共5页 Journal of Qingdao University of Science and Technology:Natural Science Edition
关键词 稀磁半导体 氧化锌 蒲公英状 光致发光 室温铁磁性 diluted magnetic semiconductors(DMSs) zinc oxide(ZnO) dandelion-like photoluminescence(PL) room-temperature ferromagnetism
  • 相关文献

参考文献18

  • 1Munizer P, Elena B, Emil R. Heterojunction with polycrys- talline thin films for optoelectronic devices applications [J]. Microelectr Eng, 2000, 52:425-431.
  • 2Water W, Chu S Y. Physical and structural properties of ZnO sputtered films[J]. Mater Lett, 2002,55(1):67-72.
  • 3Kashyout A B, Soliman M, Gamal M EI, et al. Preparation and characterization of nano particles ZnO films for dye-sensi- tized solar cells [J].Mater Chem Phys, 2005,90(2/3) :230- 233.
  • 4Ramamoorthy K, Arivanandhan M, Sankaranarayanan K, et al. Highly textured ZnO thin films:A novel economical preparation and approachment for optical devices, UV lasers and green LEDs[J].Mater Chem Phys, 2004, 85:257-262.
  • 5DietI T,Ohno H,Matsukura F,et al. Zener model deseription of ferromagnetism in zine-blende magnetic semieonductors [J].Science, 2000,287(11) :1019-1022.
  • 6Samanta K, Bhattacharya P, Katiyar R S. Optical properties of Zna-xCoO thin films grown on A12 03 (0001) substrates [J]. Appl Phys Lett,2005,87 (10) :101903.
  • 7Qiu D J,Wu H Z,Feng A M,et al. Annealing effects on the microstrueture and photoluminescenee properties of Ni-doped ZnO films[J].Appl Surf Sci,2004,222 (1/2/3/4) : 263-268.
  • 8李金华,张吉英,赵东旭,张振中,吕有明,申德振,范希武.Fe掺杂ZnO纳米薄膜的光致发光(英文)[J].发光学报,2006,27(6):976-980. 被引量:7
  • 9Monteiro T, Boemare C, Soares M J, et al. Photoluminescence and damage recovery studies in Fe-implanted ZnO single crys- taIs[J].Appl Phys, 2003,93(11) :8995-9000.
  • 10Chen A J,Wu X M,Sha Z D, et a l. Structure and photolumi- neseence properties of Fe-ZnO thin films[J]. J Phys D.. Appl Phys,2006,39(22) :4762-4765.

二级参考文献48

  • 1Shionoya S, Yen W M, Eds., Phosphor Handbook [M]. Boca Raton: CRC Press LCC, 1999, 255.
  • 2Holtz P O, Monemar B, Lozykowski H J. Optical properties of Ag-related centers in bulk ZnSe [J]. Phys. Rev. B,1985, B32:986-996.
  • 3Jiang D S, Jung H, Plook K. Temperature dependence of photoluminescence from GaAs single and multiple quantum-well heterostructures grown by molecular-beam epitaxy [J]. J. Appl. Phys., 1988, 64: 1371-1377.
  • 4Mo C M, Li Y H, Lin Y S, et al. Enhancement effect of photoluminescence in assemblies of nano-ZnO particles/silicaaerogels [J]. J. Appl. Phys., 1998, 83:4389-4391.
  • 5Zhang X T, Liu Y C, Zhi Z Z, et al. Resonant Raman scattering and photoluminescence from high-quality nanocrys-talline ZnO thin films prepared by thermal oxidation of ZnS thin films [J]. J. Phys. D, Appl. Phys., 2001, 34:3430-3433.
  • 6Mahamuni S, Borgohain K, Bendre B S, et al. Spectroscopic and structural characterization of electrochemically grownZnO quantum dots [J]. J. Appl. Phys., 1999, 85:2861-2865.
  • 7Wong E M, Searcon P C. ZnO quantum particle thin films fabricated by electrophoretic deposition [J]. Appl. Phys.Lett., 1999, 74:2939-2941.
  • 8Lin Guo, Yang S H, Yang C L, et al. Highly monodisperse polymer-capped ZnO nanoparticles: Preparation and opticalproperties [J]. Appl. Phys. Lett., 2000, 76:2901-2903.
  • 9Studenikin S A, Golego N, Cocivera M. Fabrication of green and orange photoluminescent, undoped ZnO films usingspray pyrolysis [J]. J. Appl. Phys., 1998, 84:2287-2294.
  • 10Haase M, Weller H, Henglein A. Photochemistry and radiation chemistry of colloidal semiconductors [J]. J. Phys.Chem. , 1988, 92:482-487.

共引文献119

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部