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Si衬底氮化物LED器件的研究进展 被引量：5

Progress in Nitride-based LEDs on Silicon Substrates
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摘要 通过对比分析目前氮化物LED的三种主要衬底即蓝宝石、SiC与Si的技术特点,指出了发展Si衬底LED的重要意义。详细介绍了目前国内外Si衬底LED的研究现状,解析了在Si衬底上制备LED的多种新型技术,主要包括以提高薄膜沉积质量为目的的缓冲层技术、激光脱离技术、图案掩模技术、阳极氧化铝技术,以及以提高光提取率为宗旨的镜面结构技术和量子阱/量子点技术。这些新型技术与传统的MOCVD,HVPE,MBE等制备技术相结合,在很大程度上克服了Si衬底的不足,使Si衬底上氮化物LED展现出广阔的发展前景。 The technical states of nitride-based light-emitting diodes（LEDs） grown on three major substrates of sapphire,SiC and Si are reviewed comparatively,and recent developments of LEDs on Si substrates and some new fabrication techniques are presented,including those aiming to improve the doping quality of nitride film such as buffer layer,patterned substrate,laser lift off,and AAO,and those for enhancing light extraction efficiency of LEDs such as mirror structure and multiple quantum wells/quantum dots.These new technologies combining with traditional MOCVD,HVPE,and MBE methods can help to overcome the main disadvantages of Si substrates for LEDs.
作者 李国强 杨慧
机构地区 华南理工大学材料科学与工程学院。发光材料与器件国家重点实验室
出处 《半导体光电》 CAS CSCD 北大核心 2012年第2期153-160,183,共9页 Semiconductor Optoelectronics
基金 国家自然科学基金项目(51002052) 广东省重大科技专项项目(2011A080801018) 华南理工大学中央高校基本科研业务费项目(2009ZZ0017)
关键词 LED SI衬底 缓冲层 图案掩模技术 量子阱 LED Si substrates buffer layer patterned substrate MQWs
分类号 O472 [理学—半导体物理]
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参考文献66

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共引文献1

同被引文献53

  • 1郭强,谢康,张雅蕊.光子晶体带隙结构的数值计算[J].电子科技大学学报,2008,37(S1):58-61. 被引量：3
  • 2宋世巍,梁红伟,申人升,柳阳,张克雄,夏晓川,杜国同.SiN插入层对GaN外延膜应力和光学质量的影响(英文)[J].发光学报,2013,34(8):1017-1021. 被引量：3
  • 3童杏林,罗梦泽,姜德生,刘忠明.GaN薄膜制备及脉冲激光沉积法的研究进展[J].激光杂志,2006,27(1):5-7. 被引量：5
  • 4苏萍,许振丰,顾华荣,曹良才,何庆声,金国藩.光子晶体发光二极管[J].光学技术,2007,33(4):505-509. 被引量：4
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引证文献5

二级引证文献2

半导体光电
2012年 第2期

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