摘要
采用深紫外光致发光技术测量AlxGa1-xN半导体异质外延膜的禁带宽度,结合Material Studio软件中的CASTEP模块模拟计算AlxGa1-xN异质外延膜材料的弯曲因子,测定了AlxGa1-xN外延膜样品中的Al元素物质的量分数。结果表明,发射波长为224.3nm的HeAg激光器能够激发AlxGa1-xN半导体材料产生发光现象。CASTEP软件模拟计算得到AlxGa1-xN的弯曲因子为1.01462±0.06772eV,认为其弯曲因子在1.0eV附近,由此可以理论计算得到具有Al组分梯度的一系列AlxGa1-xN外延膜样品中的Al元素物质的量分数。
Deep-ultraviolet photoluminescence technique is used to investigate the band gaps of AIxGa1-xN epitaxial films. The bowing parameter of AIxGa1-xN is studied by CASTEP module of Material Studio simulation software and the AI molar fractions of AIxGa1-xN epitaxial films are researched. The result shows that the HeAg laser with 224.3 nm emission wavelength can make AIxGa1-xN material produce luminescence. The bowing parameter of AIxGa1-xN epitaxial film is calculated with CASTEP software simulation to be 1. 01462±0. 06772 eV, from which we can calculate the A1 molar fractions of AIxGa1-xN epitaxial films.
出处
《激光与光电子学进展》
CSCD
北大核心
2012年第5期138-142,共5页
Laser & Optoelectronics Progress
基金
“十一五”化学计量项目资助课题
