HEMT器件力电耦合传感特性测试

Test on electromechanical coupling sensitive property of HEMT device

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摘要设计了在Si微结构与AlGaN/GaN高电子迁移率晶体管(HEMT)集成的微机电系统(MEMS)。通过微机械加工工艺,完成了力电耦合传感结构的加工。通过实验测试发现HEMT器件具备很强的力电耦合特性,测试结果在-1.5 V栅压下,HEMT器件对应力的灵敏度为123.96 MPa/mA,线性度为6.95%。 A MEMS integrates Si micro-structure with AlGaN/GaN high-electron-mobility transistor（HEMT）devices is designed.Fabrication of the electromechanical coupling sensitive structure is achieved.The experimental test indicates that the AlGaN/GaN HEMT device has strong electromechanical coupling effect.When grid voltage is-1.5V,the value of sensitivity is up to 123.96 MPa/mA and the value of linearity is 6.95 %.

作者胡宇光刘俊王勇

机构地区中北大学电子测试技术国家重点实验室中国电子科技集团公司第十三研究所

出处《传感器与微系统》 CSCD 北大核心 2012年第5期145-146,152,共3页 Transducer and Microsystem Technologies

基金国家自然科学基金资助项目(50730009) 电子测试国家重点实验室基金资助项目(9140C1204030907)

关键词 AlGaN/GaN/Si 高电子迁移率晶体管力电耦合效应灵敏度 AlGaN/GaN/Si HEMT electromechanical coupling effect sensitivity

分类号 O782 [理学—晶体学]

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传感器与微系统

2012年第5期

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HEMT器件力电耦合传感特性测试

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