S波段连续波输出功率20W的SiC MESFET

Development of S-Band CW SiC MESFET with 20 W Output

采用自主开发的SiC外延材料和工艺技术,相继实现了S波段连续波状态下输出功率瓦级和10 W的SiC MESFET。经过版图设计的改进和工艺条件的优化,取得了S波段连续波状态下输出功率大于20 W,功率增益大于12 dB,功率附加效率大于30%的SiC MESFET研制结果。器件的功率增益和输出功率较以往的研制结果均得到显著提高,器件的反向截止泄漏电流也大幅度降低。由于器件未采用内匹配结构,其体积也比一般内匹配器件的体积小。研制结果为多胞合成实现更大功率输出的器件创造了条件,也使S波段连续波大功率输出器件的研制水平上了一个新的台阶。

The SiC MESFET devices with 1 W and 10 W output power at S-band under continuous wave（CW）were developed by own epitaxial structure and self-developed device process respectively.After the optimization layout and process,the output power is more than 20 W with single cell S-band continuous wave,the power gain is more than 12 dB and the power added efficiency is more than 30%.The power gain and the output power are increased obviously and the leakage currents are reduced markedly.The volume of the SiC MESFETs is small because of internally-matching networks removed.The research results provide ideal conditions for the more high output power devices with multi-cells.The high power devices at S-band under continuous wave have been developed rapidly.