期刊文献+

氮化铝晶体生长技术的研究进展 被引量:6

Research Progress in Growth of Aluminum Nitride Crystal
下载PDF
导出
摘要 氮化铝(AlN)是一种重要的宽带隙(6.2eV)半导体材料,在高温、高频、大功率电子器件、光电子器件、激光器件等半导体器件中有着良好的应用前景。物理气相传输法(PVT)是制备AlN体单晶最有效的途径之一,目前,美国Crystal IS公司、俄罗斯N-Crystals公司在该领域处于领先地位,可以制备出直径为2inch(5.08cm)的体单晶。为了获得大尺寸、高质量的AlN晶体,需要不断寻找合适的籽晶材料。从最早的SiC籽晶,发展到近年来的AlN籽晶、SiC/AlN复合籽晶,加上不断改进的PVT工艺条件,少数研究机构已经可以获得直径跨度大、缺陷密度低的AlN晶体。近两年,高品质的AlN晶体也已成功应用于紫外LED的研制。 Aluminum nitride(AlN) is a significant wide band-gap semiconductor material, which is propective in many semiconductor devices such as high-temperature, high-frequency, large-power electronic devices, optoeleetronic devices, laser devices and so on. Physical vapor transport method (PVT) is one of the most effective method for the growth of AlN bulk crystal. Currently, Crystal IS Ltd, U. S. , N-Crystals Ltd, Russia, are capable to prepare AlN bulk crystal 2inch in diameter, which are in the leading position in this field. In order to obtain AlN crystal with large area and high quality, consistent search for compatible seed material is needed. From the earlier SiC seed , to the recent developed AIN seed and SiC/AlN seed, along with improved process conditions, a few research institutions have access to AlN crystal with large size in diameter and low defect density. During the past two years, high-quality AlN crystals have been successfully applied to the development of UV-LED.
出处 《材料导报》 EI CAS CSCD 北大核心 2012年第9期11-14,26,共5页 Materials Reports
基金 国家自然科学基金(50902037 51172055) 中央高校基本科研业务费专项资金(HIT.ICRST2010008)
关键词 氮化铝 物理气相传输 籽晶 aluminum nitride, physical vapor transport, seed
  • 相关文献

参考文献34

  • 1Zheng R, Wu H. Development of bulk AlN single-crystal growth technology[J]. J Shenzhen University Sci Eng, 2010,27(4):434.
  • 2Schowalter L J, Slack G A, Whitlock J B,et al. Fabrication of native, single-crystal AlN substrates[J]. Phys Status So- lidi C,2003(4) :1.
  • 3Volkova A,Ivantsov V,Leung L, et al. Hydride vapor phase epitaxy of high structural perfection thick A1N layers on off- axis 6H-SiC[J]. J Cryst Growth,2011,314(1) :113.
  • 4Kehagias T,Lahoureade L,Lotsari A,et al. Interracial struc- ture of semipolar A1N grown on m-plane sapphire by MBE [J]. Phys Status Solidi B,2010,247(7):1637.
  • 5Lai M J, Chang L B, Yuan T T, et al. Improvement of crys- tal quality of A1N grown on sapphire substrate by MOCVD [J]. Cryst Res Techn, 2010,45 (7) : 703.
  • 6Edgar J H, Liu L, Zhuang D, et al. Bulk AlN crystal growth: Self-seeding and seeding on 6H-SiC substrates[J]. J Cryst Growth, 2002,246(3-4): 187.
  • 7Gu Z, Du L, Edgar J H,et al. Sublimation growth of alumi- num nitride crystals[J]. J Cryst Growth, 2006,297 (1) : 105.
  • 8Schujman S B, Schowalter L J,Bondokov R T, et al. Struc- tural and surface characterization of large diameter, crystal- line AlN substrates for device fabrication [J]. J Cryst Growth,2008,310(5) :887.
  • 9Chemekova T Y, Avdeev O V, Barsh I S,et al. Sublimation growth of 2 inch diameter bulk AlN crystals[J]. Phys Sta- tus Solidi C,2008,5(6):1612.
  • 10Slack G A, McNelly T F. Growth of high purity AlN crystals [J]. J Cryst Growth, 1976,34(2): 263.

二级参考文献51

  • 1赵有文,董志远,魏学成,段满龙,李晋闽.升华法生长AlN体单晶初探[J].Journal of Semiconductors,2006,27(7):1241-1245. 被引量:9
  • 2Slack G A,McNelly T F.Growth of High Purity AlN Crystals[ J ].J.Cryst.Growth,1976,34:263.
  • 3Balkas C M,Sitar Z,Zheleva T,et al.Sublimation Growth and Characterization of Bulk Aluminum Nitride Single Crystal[ J ].J.Cryst.Growth,1997,179:363.
  • 4Schowalter Leo J,Rojo Juan C,Yakolev Nikolai,et al.Preparation and Characterization of Single-crystal Aluminum Nitride Substrates[ C ].MRS Internet J.Nitride Semicond.,2000,Res.5S1,W6.7.
  • 5SchowalterL J,Shusterman Y,Wang R,et al.Epitaxial Growth of AlN and Al0.5 Ga0.5 N Layers on Aluminum Nitride Substrates[ J ].Appl.Phys.Lett.,2000,76:985.
  • 6Segal A S,Karpov S Yu.,Makarov Yu N,et al.On Mechanisms of Sublimation Growth of AlN Bulk Crystals[ J ].J.Cryst.Growth,2000,211:68-72.
  • 7Liu Lianghong,Liu B,Shi Y,Edgar J H.Growth Mode and Defects in Aluminum Nitride Sublimed on (0001)6H-SiC Substrates[ C ].MRS Intemet J.Nitride Semicond.,2001,6:(7).
  • 8Zhuang D,Edgar J H,Strojek B,et al.Defect-selective Ething of Bulk AlN Single Crystals in Molten KOH/NaOH Eutectic Alloy[ J ].Journal of Crystal Growth,2004,262:89-94.
  • 9Epelbaum B M,Seitz C,Magerl A,et al.Natural Growth Habitof Bulk AlN Crystals[ J].Journal of Crystal Growth,2004,265:577-581.
  • 10Epelbaum B M,Bickermann M and Winnacker A.Sublimation Growth of Bulk AlN Crystals:Process Temperature and Growth Rate[ J ].Materials Science Forum Vols.,2004,457-460:1537-1540.

共引文献13

同被引文献37

引证文献6

二级引证文献16

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部