衬底温度对Sn掺杂ZnO薄膜结构、电学和光学性能的影响

Effect of Substrate Temperature on the Structure,Electrical and Optical Properties of Sn-doped ZnO Thin Films

采用射频磁控溅射技术在石英衬底上制备了掺杂浓度为0.5%(原子分数)的ZnO∶Sn(TZO)薄膜,研究了不同衬底温度下薄膜的结构、形貌、电学和光学的性能。研究发现,TZO薄膜沿着C轴择优生长,在400℃时结晶度最好,最低电阻率为2.619×10-2Ω·cm,在可见光范围内具有较好的透光率。

Tin doped zinc oxide（TZO） thin films were prepared by radio frequency magnetron sputtering on quartz glass substrates. The concentration of Sn element in the powder target was 0. 5% in atomic ratio. The effect of substrate temperature on the structural, surface morphologies, electrical and optical properties of the ZnO ： Sn thin films was investigated. It was found that the as-deposited film is C-axis perpendicular to the substrate. The lowest resistivity（2. 619× 10^-2Ω· cm）, and the best crystal quality were obtained at 400℃. In the visible region, the films were with good transmittance.