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金属/碲镉汞接触研究的发展 被引量:1

Research Progress of Metal/Mercury Cadmium Telluride Contacts
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摘要 介绍了金属/碲镉汞(Hg_(1-x)Cd_xTe,MCT)接触研究的发展状况,包括基本概念、生长结构、化学活性以及电学性能。金属/MCT接触有两类:一类是电子(欧姆)接触,另一类是整流(Shottky)接触。欧姆接触是MCT红外探测器的一个重要组成部分,它决定了器件的性能和可靠性。欧姆接触的电阻小,与MCT黏附性好,并且在热循环条件下可保持性能稳定。由于需要具有较大功函数的接触金属,p型MCT很难实现,而n型MCT则可以用很多金属实现。 The development status of metal/mercury cadmium telluride(Hg_(1-x)Cd_xTe,MCT)contacts including basic concepts,growth structure,chemical reactivity and electrical properties is presented. There are two types of metal/MCT contacts:electronic(ohm)type and rectifying(Shottky)type.Ohm contacts are the important parts of MCT infrared detectors.They can determine the performance and reliability of MCT devices.Ohm contacts have low resistance and good adhesion to MCT material.They can keep stable behavior against thermal cycling.Since the metal with a larger work function is needed, the contact is difficult to realize for p-type MCT.For n-type MCT,the contacts can be realized with a large variety of metals.
机构地区 昆明物理研究所
出处 《红外》 CAS 2012年第5期7-22,共16页 Infrared
关键词 金属/半导体接触 金属/半导体界面 金属/碲镉汞接触 欧姆接触 碲镉汞红外探测器 metal/semiconductor contact metal/semiconductor interface metal/ mercury cadmium telluride contact ohm contact mercury cadmium telluride infrared detector
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  • 1介万奇,李宇杰.Ⅱ-Ⅵ族化合物半导体中的晶体缺陷及其控制[J].功能材料,2004,35(z1):129-134. 被引量:1
  • 2工藤澈一,笛木和雄著.董治长译.固体离子学[M].北京:北京工业大学出版社,1992.
  • 3Peter Capper, James Garland. Mercury Cadmium Telluride: Growth, Properties and Applications [M]. UK: John Wiley & Sons Ltd, 2011.
  • 4DonaldAN著.赵毅强,姚素英,解晓东,等译.半导体物理与器件(第三版)[M],北京:电子工业出版社,2005.
  • 5RobertFP著.黄如,王漪,王金延,等译.半导体器件基础[M].北京:电子工业出版社,2004.
  • 6Maurice H F. Frontiers of Thin Film Technology [M]. San Diego: Academic Press, 2001.
  • 7Berding M A, M.van Schilfgaarde, Sher A. First- principles Calculation of Native Defect Densities in Hgo.sCdo.2Te [J]. Physical Review B, 1994, 50(3): 1519-1534.
  • 8Ciani A J, Ogut S, Batra I P. Concentrations of Native and Gold Defects in HgCdTe from First Princi- ples Calculations [J]. Journal of Electronic Materials, 2004, 33(6): 73~741.
  • 9Vydyanath H R. Status of Te-rich and Hg-rich Liquid Phase Epitaxial Technologies for the Growth of (Hg,Cd)Te Alloys [J]. Journal of Electronic Materials, 1995, 24(6): 1275 1285.
  • 10Astles M G, Shaw N, Blackmore G. Techniques for Improving the Control of Properties of Liquid Phase EpitaxiM (CdHg)Te [J]. Semiconductor Science and Technology, 1993, 8(1S): 211-215.

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