B_2O_3对BMT微波陶瓷结构及介电性能的影响

Effect of B_2O_3 on the Structure and Dielectric Properties of BMT Microwave Ceramics

研究了w(B2O3)=0.5%～3.0%(质量分数)对Ba(Mg1/3Ta2/3)O3(BMT)微波介质陶瓷结构和微波特性的影响。实验结果表明,B2O3掺杂可促进烧结,当w(B2O3)=1%时,BMT陶瓷致密化烧结温度降至1 200℃左右,其表观密度ρ=7.306g/cm3,相对密度达到95.7%,同时,陶瓷体系获得了良好的介电常数εr=22.08,品质因数Q.f=88 000GHz(10GHz),频率温度系数τf=3.3×10-6/℃。

The effects of B2 03 with w=0.5% to 3.0% on the structure and microwave properties of Ba（Mgl/3 Ta2/3 ）03 （BMT） ceramic has been investigated. It has been found that I32 03 doping can improve the BMT microwave ceramic sintering. When （B2 03 ） is equal to 1% ,the densification sintering temperature of BMT ceramic has been reduced to 1 200℃,the apparent density p is equal to 7 306 g/cm3 ,the relative density is 95.7%. The BMT micro- wave eeramic system has good microwave dielectric properties as follows：er = 22. 08, the quality factor Q ~ f = 88 000 GHz（10 GHz）, the coefficient of frequency to temperature rf = 3.3 ）〈 10-6 / ~C.