摘要
利用两步法金属辅助化学刻蚀(MACE)法制备硅纳米线(SiNWs)样品。研究了双氧水(H2O2)浓度对SiNWs样品形貌、生长速率以及发光特性的影响。发现随着H2O2浓度的增加,SiNWs样品生长速率随之提高,同时出现了位于685nm附近较宽的来源于多孔硅结构的光致发光峰。实验结果表明,多孔硅结构的形成与银离子(Ag+)通过扩散作用在SiNWs样品侧壁重新沉积有关。
The influence of hydrogen peroxide concentration on the morphology, growth rate and photoluminescence of silicon nanowires in a two-step metal assisted chemical etching method is studied. It is shown that the growth rate increases with the increased concentration. The photoluminescence spectra exhibit broad visible emission centered around 685 nm originating from porous silicon structures. Formation of the porous structure is attributed to the renucleation of Ag nanoparticles on the sidewalls of silicon nanowires through diffusion process.
出处
《上海电机学院学报》
2012年第2期123-127,共5页
Journal of Shanghai Dianji University
基金
上海市高校选拔优秀青年教师科研专项基金项目资助(shdj005)
关键词
金属辅助化学刻蚀
硅纳米线
形貌
生长速度
metal assisted chemical etching
silicon nanowires
appearance
growth velocity
