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高功率反向开关晶体管开关寿命特性 被引量:6

Lifetime of high power reversely switched dynistor switches
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摘要 研制了10kV高压反向开关晶体管(RSD)开关组件。在重复频率0.2Hz、峰值电流约107kA、峰值功率约1GW、单次传输电荷约20C、单次传输能量约100kJ条件下,实验次数达50 000多次;主要研究了RSD开关的静态伏安特性随实验次数的变化趋势。采用数值分析的方法,统计拟合得到了长脉冲大电流条件下RSD开关的寿命模型,并依据失效判据初步预估RSD开关的寿命可达107次。 This paper presents a switch assembly based on reversely switched dynistor(RSD).The RSD-based assembly has been tested with the working voltage of 10 kV,repetition frequency of 0.2 Hz and peak current of about 107 kA.The peak power is larger than 1 GW.The transferred charge and energy per shot are about 20 C and 100 kJ,respectively,and the total experimental shot number is more than 50 000.The lifetime of RSD switch was investigated with the static volt-ampere character.The lifetime model of RSD switch under high current for long pulse application was established with numerical fitting.According to the failure criterion,the preliminarily estimated lifetime is about 107 shots.
出处 《强激光与粒子束》 EI CAS CSCD 北大核心 2012年第5期1191-1194,共4页 High Power Laser and Particle Beams
关键词 反向开关晶体管开关 固态开关 静态特性 寿命 大电流 reversely switched dynistor switch solid-state switch static characteristic lifetime high current
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参考文献13

  • 1Gorbatyuk A V, Grekhov I V, Nalivkin A V. Theory of quasi-diode operation of reversely switched dynistor[J]. Solid-state Electronics,1988, 31(10)1483-1491.
  • 2Chumakov G D, Galakhov I V, Gudov S N, et al. Switching of high-power current pulses up to 250 kA and submillisecond duration using new silicon devices--reverse switched dynistorsrC//10th IEEE Int Pulsed Power Conf. 1995:1103-1108.
  • 3Grekhov I V. Mega and gigawatts-ranges, repetitive mode semiconductor closing and opening switches[-C//llth IEEE Int Pulsed Power Conf. 1997425-429.
  • 4Savage M E. Final results from the high-current, high-action closing switch test program at Sandia National Laboratories[J. IEEE Trans on Plasma Sci, 2000, 28(5) :1451-1455.
  • 5Schneider S, Podlesak T F. Reverse switching dynistor pulsersJ]. IEEE Trans on Plasma Sci, 2000, 28(5) .-1520-1523.
  • 6Grekhov I V, Kozlov A K, Korotkov S V. High-voltage RSD switch of submegaampere current pulses of microsecond durationJ. Instru- ment and Experimental Techniques, 2003, 46(14) ..48-53.
  • 7Belyaev S A, Bezuglov V G, Chibirkin V V, et al. New generation of high power semiconductor closing switching for pulsed power appliea- tions[C]//Proc of 28th Int Conf on Phenomena in Ionized Gases. 2007:1525-1528.
  • 8Korotkov S V. Switching possibilities of reverse switched-on dynistors and principles of RSD circuitry[J. Instrument and Experi*nental Techniques, 2002, 45 (4) : 437-470.
  • 9何小平,许日,汤俊萍.新型大功率半导体RSD开关[c]//第八届高功率粒子束暨高压学术交流会文集.三亚,中国,2001:59-61.
  • 10周郁明,余岳辉,梁琳,陈海刚.超高速大电流半导体开关实验研究[J].强激光与粒子束,2006,18(3):447-450. 被引量:13

二级参考文献17

  • 1何孟兵,王清玲,贺臣,李劲,姚宗干.旋转电弧对火花间隙开关电极烧蚀的影响[J].强激光与粒子束,2004,16(11):1468-1472. 被引量:13
  • 2赵军平,章林文,李劲.基于MOSFET的固体开关技术实验研究[J].强激光与粒子束,2004,16(11):1481-1484. 被引量:28
  • 3李谋涛,余岳辉,胡乾,杜如峰.基于RSD开关的脉冲放电主回路[J].电力电子技术,2005,39(2):111-114. 被引量:7
  • 4Grekhov I V,Kozlov A K,Korotkov S V,et al.High-voltage RSD switches of submegaampere current pulses of microsecond duration[J].Instruments and Experimental Techniques,2003,46(1):48-53.
  • 5Grekhov I V.Mega and gigawatts-ranges,repetitive mode semiconductor closing and opening switchs[C]//Proc 11 th IEEE Pulsed Power Conference,1997:425-429.
  • 6Jiang W H,Yatsui K,Takayama K,et al.Compact solid-state switched pulsed power and its applications[J].Proc of the IEEE,2004,92(7):1180-1196.
  • 7Gorbatyuk A V,Grekhov I V,Nalivkin A V.Theory of quasi-diode operation of reversely switched dinistors[J].Solide-state Electronics,1988,31(10):1483-1491.
  • 8Chumakov G D,Galakhov I V,Gudov S N,et al.Switching of high-power current pulses up to 250 kA and submillisecond duration using new silicon devices-Reverse Switched Dinistors[C]//Proc 10th IEEE Pulsed Power Conference,1995:1103-1108.
  • 9Schneider S,Simon F,Grekhov I V,et al.Experimental investigation of dynistor based pulsers[C]//Conference Record of the 23rd International Power Modulator Symposium.Piscataway,NJ,1998:169-172.
  • 10何小平,许日,汤俊萍.新型大功率半导体RSD开关[C]//第八届高功率粒子束暨高压学术交流会文集.2001:59-61.

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