MOCVD法制备的p-ZnO/n-SiC异质结器件及其电致发光性能

Fabrication and Electroluminescent Properties of p-ZnO/n-SiC Heterojunction Device by MOCVD

采用光辅助金属有机化学汽相沉积(PA-MOCVD)法在n-SiC(6H)衬底上制备出As掺杂的p型ZnO薄膜,并制备出相应的p-ZnO∶As/n-SiC异质结器件。X射线衍射(XRD)和光致发光(PL)测试表明,ZnO薄膜具有较好的结构和光学特性。电流-电压(I-V)测试结果表明,该型异质结器件具有良好的整流特性,开启电压为5.0 V,反向击穿电压约为-13 V。正向偏压下,器件的电致发光(EL)谱表现出两个分别位于紫外和可见光区域的发光峰,通过和ZnO、SiC的PL谱对照,证实异质结器件的发光峰来源于ZnO侧的辐射复合。

As-doped p-ZnO films were grown by photo-assisted metal-organic chemical vapor deposition（PA-MOCVD） system on n-SiC（6H） substrate and the p-ZnO/n-SiC heterojunction device was fabricated.The structural and optical properties of the As-doped ZnO film have been studied by X-ray diffraction（XRD） and photoluminescence（PL） measurements.A typical p-n junction rectification behavior was acquired with a turn-on voltage of 5.0 V and a reverse breakdown voltage of about-13 V.Under forward bias,two obvious emission peaks at ultraviolet（UV） and visible regions were detected.By comparing with the PL spectra of ZnO and SiC,the origin of the UV and visible emission peaks was confirmed from the radiative recombination of ZnO side.