摘要
互补金属氧化物半导体(CMOS)反相器是集成电路的基本单元,其开关时间影响集成电路的传输延迟。文章针对金属氧化物半导体场效应晶体管(MOS)的宽长比对CMOS反相器开关时间tr和tf的影响,分析N型金属氧化物半导体晶体管(NMOS)和P沟道耗尽型场效应晶体管(PMOS)宽长比对开关时间的影响,通过多次模拟分析,得出对称开关时间对宽长比的要求。
CMOS inverter is the most important and basic unit in IC,and its switching time influences the IC's transmission delay.Influencing of the transistor's W/L to tr and tf was analyzed in this paper.By simulation times with changing the W/L of NMOS and PMOS and analyzing the change of time,the requirement of W/L to symmetry switching time was acquired.
出处
《信息化研究》
2012年第2期52-54,共3页
INFORMATIZATION RESEARCH