摘要
文章研究了在实际生产过程中,真空磁控溅射设备下制备ITO膜时,高温成膜过程中环境中的氧气分压对ITO薄膜的光电特性的影响。P-ITO指的是结晶状态的ITO膜,在高温环境下ITO膜成膜工艺,也就是常说的高温成膜工艺,在成膜过程中结晶,通过调整成膜过程中O2的分压制备所需的ITO膜。
In this paper, the optical and electrical properties of ITO thin films prepared by DC magnetron sputtering on various conditions, various partial O2 pressure, are investigated in real production. P-ITO means ITO in crystalline state. ITO deposition process in high temperature is ussally called high temperature deposition process, in which ITO crystallizes. By adjusting partial O2 pressure, expected ITO films can be made.
出处
《现代显示》
2012年第4期42-44,共3页
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关键词
直流磁控溅射
基板温度
氧气分压
方块电阻
透过率
DC magnetron sputtering deposition
substrate temperature
O2 pressure
square resistance
transmittance