MSM结构ZnO紫外探测器的制备及光电性能研究

Fabrication of ZnO MSM UV Detector and Its Photoelectronic Property

采用磁控溅射方法,在石英衬底上制备了光电性能优良的ZnO紫外探测器。通过紫外光电性能测试、扫描电子显微镜(SEM)观察及X射线衍射(XRD)分析,研究了ZnO紫外探测器的光电特性。结果表明:探测器的光电流高出暗电流近3个数量级,紫外波段的光响应高出可见光波段近2个数量级,所制备ZnO紫外探测器达到了高辐射灵敏度和可见盲特性的要求。

ZnO UV detector were prepared by magnetron sputtering on quartz substrate. The photoelectronic properties of ZnO UV detector was investigated through SEM, XRD, and the detection of photoelectronie properties. It was found that the photocurrent was as much as 3 orders of magnitude greater than the darkcurrent, and the ultraviolet photoresponse was as much as 2 orders of magnitude greater than visible light photoresponse. ZnO UV detector with high sensitivity and visible blind property could be obtained.