期刊文献+

PMMA分子量对其电学特性的影响 被引量:1

The effect of Molecular weight on the electrical property of PMMA
原文传递
导出
摘要 通过分析以PMMA[poly(methyl methacrylate)]为绝缘膜的MIS结构的电学特性,研究了分子量对PMMA薄膜电学特性的影响。PMMA薄膜通过旋涂溶于氯仿的20mg/ml PMMA溶液制成。PMMA薄膜厚度为220nm,临界电场超过1.8MV/cm。测量结果表明:(1)996K分子量PMMA薄膜的单位面积漏电流最小,仅有6.0×10-9/cm2。350K分子量的漏电流较大,为8.5×10-9/cm2;(2)高电场下决定漏电流与场强关系的物理机制是肖特基发射,通过线性拟合计算出银电极与PMMA之间的势垒高度约为0.5eV;(3)分子量大的PMMA陷阱密度小。996K分子的最小,为4.7×1010/cm2。 In this paper we present a detailed characterization of metal-insulator-semiconductor MIS structure with PMMA as insulator layer.The effect of molecular weight on the electrical property of PMMA is researched.The PMMA layer is spin coated from a 20mg/ml dilution of PMMA in chloroform.The critical electric field is more than 1.8MV/cm and the thickness is 220nm.When the molecular is 996K,we get the minimum unit area current,which is 6.0×10-9A/cm2.While the molecular is 350K,we get bigger unit area current,which is 8.5×10-9/cm2.Schottky emission accounts for the leakage current versus electric field strength behavior in high electric fields and the Schottky barrier height is 0.9eV calculated by linear fitting.The trap density decreases with the molecular weight increasing.996k molecular weight PMMA has the least trap density,which is 4.7×1010/cm2.
出处 《功能材料与器件学报》 CAS CSCD 北大核心 2012年第2期116-121,共6页 Journal of Functional Materials and Devices
基金 国家自然科学基金资助项目(No.60776056)
关键词 PMMA 绝缘膜 OTFTs 栅绝缘膜陷阱 C-V特性 PMMA dielectric OTFTs trap density of dielectric C-V curve
  • 相关文献

参考文献13

  • 1Haase M A, Kelley T W, Muyres D V, et al. Pentancene Based Radio- Frequency Identification Circuitry, [ J ]. Applied Phys Lett, 2003, 82 (22) :3964 - 3966.
  • 2Sheraw C D, Zhou L, Huang J, et al. Organic Thin Transistor - Driven Polymer - Dispersed Liquid Crystal plays on Flexible Polymeric Substrates [ J ]. Appl Lett, 2002, 806(6) : 1088 - 1090.
  • 3Film Dis- Phys Huitema H E A, Gelinck G H, Van der Putten J B P H, et al. Plastic Transistors in Active - Matrix Displays[ J ]. Na- ture, 2001, 414(6864) : 599.
  • 4Antoio Facchetti, Myung- Han Yoon, and Tobin J. Marks. Gate Dielectrics for Organic Field -Effect Tran- sistors : New Opportunities for Organic Electronics[ J ]. Ad- vanced Materials, 2005, 17 : 1705 - 1725.
  • 5Tsung - syun Huang, Yan- kuin Su, and Po - Cheng Wang. Study of organic thin film transistor with polymethyl- methacrylate as a dielectric layer[J]. Applied Physics Let- ters, 2007, 91:092116.
  • 6Tsung - syun Huang, Yan- kuin Su, and Po - Cheng Wang. Poly (methyl methacylate ) Dielectric Material Ap- plied in Organic Thin Film Transistors [ J ]. Japanese Journal of Applied Physics, 2008, 47 (4) : 3185 - 3188.
  • 7Christopher B. Walsh, Elias I. Franses. Uhrathin PMMA films spin- coated from toluene solutions [ J ]. Thin solid film, 2003, 49:71 -76.
  • 8Moonkyong Na, Shi -Woo Rhee. Electronic characteriza- tion of AI/PMMA [ poly ( methyl methacrylate) ]/p - Si and A1/CEP( cyanothyl pullulan)/p - Si structures [ J ]. Organ- ic Electronics, 2006, 7 : 205 - 212.
  • 9M. Estrada, I. Mejia, A. Cerdeira, et al. MIS polymeric structures and OTFTs using PMMA on P3HT layers [ J]. Solid State Electronics, 2008, 52:53 -59.
  • 10M. C. Petty, Molecular Electronics ( Wiley, Chichester, 2007 ).

同被引文献17

  • 1刘承斌,范曲立,黄维,王迅.有机场效应晶体管材料及器件研究进展[J].物理,2005,34(6):424-432. 被引量:14
  • 2刘恩科,朱秉升,罗晋生.半导体物理学[M].北京:电子工业出版社,2009:76.
  • 3Dimitrakoppulos C D,Purushothaman S,Kymissis J,et al.Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators[J].Science,1999,283(5403):822-824.
  • 4Vinay K,Singh B,Baquer M.Accurate characterization of organic thin film transistors in the presence of gate leakage current[J].AIP Advances,2011,1(4):42123-1-11.
  • 5Zhang S,Jin X,Painter P C,et al.Broad-band dielectric study on poly(4-vinylphenol)/poly(ethylmethac- rylate)blends[J].Macromolecules,2002,35(9):3636-3646.
  • 6Su Yajun,Liu Jiangang,Zheng Lidong,et a1.Polymer assisted solution-processing of rubrene spherulites via solvent vapor annealing[J].The Royal Society of Chemistry,2012,2(13):5779-5788.
  • 7Tompkins H G,McGahan W A.Spectroscopic Ellipsometry and Reflectometry[M].New York:John Wiley&Sons,1999:93.
  • 8Xie H,Wei J,Zhang X.Characterisation of Sol-gel thin films by spectroscopic ellipsometry[J].Journal of Physics:Conference Series,2006,28(1):95-99.
  • 9Losurdo M,Giangregorio M M,Capezzuto P,et a1.Study of anisotropic optical properties of poly(arylenephenylene)thin films:?Dependence on polymer backbone[J].Synthetic Metals,2003,36(12),4492-4497.
  • 10Zhao Y P,Wang G C,Lu T M,et a1.Surface-roughness effect on capacitance and leakage current of an insulating film[J].Physical Review B,1999,60(12):9157-9164.

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部