ITO薄膜的XPS和AES研究

XPS AND AES STUDIES OF ITO THIN FILMS

分别用 ＸＰＳ和 ＡＥＳ分析了ＩＴＯ薄膜真空退火前后各元素化学状态的变化和深度分布情况．研究表明，退火前后Ｓｎ和Ｉｎ处于各自相同的化学状态中．Ｏ以氧充足和氧缺乏两种化合状态存在，其结合能值分别为（５２９．９０±０．３０）ｅＶ和（５３１．４０±０．２０）ｅＶ．

The chemical states of In, Sn and O in Sn-doped In_2O3 films have been investigated by using X ray photoelectron spectroscopy, as well the depth profile of In, Sn and O by Auger electron spectroscopy. The results indicated that the Sn and in respectively existed in the same chemical state for both as-deposited and post-annealed films. Two types of O^2- ions, O_I and O_II. have been distinguished by Gauss simulation. O_I had a binding energy of (529.90±0.30)eV which was in oxygen sufficient region and Oil has a binding energy of (531.4010.2)eV which was in oxygen deficient regions, It was also revealed that the oxygen deficient regions mainly existed in the surface layer. The well distributions of Sn, In and O in film body and metal enrichment in film-to-substrate interface were also revealed.