Ge_xSi_(1-x)材料生长的改善

IMPROVEMENT ON THE GROWTH OF Ge_xSi_(1-x) MATERIAL

利用超高真空化学气相淀积（ＵＨＶ／ＣＶＤ）系统在 ６５０℃生长出表面光亮的 ＧｅＳｉ单晶 在１２００Ｌ／ｍｉｎ分子泵与前级机械系间串接 ４５０Ｌ／ｍｉｎ分子泵，改善了生长环境串接分子泵后生长的 样品的Ｘ射线双晶衍射分析表明，外延层衍射峰半宽仅为 １９８ａｒｃｓｅｃ， 且出现了 Ｐｅｎｄｅｌｌｏｓｕｎｇ干涉条 纹，说明外延层结晶质量很好。

Ge_xSi_(1-x) crystal was grown by ultrahigh vacuum chemical vapor deposition (UHV/CVD) at 650℃, results showed that O_2 and/or H_2O caused the surface of the grown materials irregular in the growth process. An auxiliary 450L/min turbo molecular pump was connected serially between 1200L/min turbo molecular pump and mechanical pump, resulting in a much better growth condition. There is a peak of epilayer with the Full Width at Half Maximum (FWHM) of 198arcsec, as well as Pendellosung intederence fringes in Double-Crystal X-ray Diffraction (DCXRD) of one sample grown after a auxiliary turbo molecular pump was used, this is a indicative of the epilayer with excellent crystalline quality.