CdTe介质膜与HgCdTe晶片间界面特性的研究

STUDY OF THE INTERFACE OF THE SPUTTERING CdTe DIELECTRIC FILM AND HgCdTe CRYSTAL

利用Ａｒ~＋束溅射沉积技术在ＨｇＣｄＴｅ表面低温生长了 ＣｄＴｅ介质薄膜．分别用 ＣｄＴｅ介质膜和 ＨｇＣｄＴｅ自身阳极氧化膜对 ＨｇＣｄＴｅ表面钝化．利用光电导衰退信号波形的拟合，得到了不同表面钝化的ＨｇＣｄＴｅ非平衡载流子表面复合速度结果表明。

CdTe film was deposited on the HgCdTe crystalline surface under low temperature condition using Ar^+ beam sputtering deposition technique. The surfaces of different areas of a HgCdTe wafer were passivated with CdTe film and anodic oxide film. The non-equilibrium carriers life-times of the HgCdTe surfaces of difFerent sudece passivants were obtained using photo-onductivity decay technique. The surface recombination velocities of the HgCdTe surfaces passivated with the CdTe film and anodic oxide film were also worked out. The results showed that the HgCdTe sample passivated with the sputtering CdTe film had an even better interface quality compared with the HgCdTe sample passivated with the well developed anodic oxide technology.