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电荷耦合器件在电子束参数测量中的损伤问题 被引量:1

Damage problem of CCD in the electron beam parameters measure
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摘要 针对直线感应电子加速器(LIA)实验束参数测量技术应用过程中,电荷耦合器件(CCD)在纳秒激光辐照下工作的损伤效应方面进行研究。在分析CCD感光成像原理及其高能粒子测量应用的基础上,通过监测这种辐射下CCD输出信号的变化和实验后CCD的成像,对CCD中发生的软、硬损伤进行探讨,得到CCD能量损伤阈值的光子的响应特性和辐射损伤评估,保证了加速器束参数测量的可靠性。 There are strong electromagnetism interruption in the process of high power electron beam parameters measure and diagnosis.The Charge Coupled Devices(CCD) is irradiated by strong electron pulse,laser and X-ray.According to the analysis on the CCD imaging principle and the measure on high energy particles,the changes of the CCD output signals under the radiation environment are monitored as well as the CCD imaging after the experiment.The soft-damage and hard-damage of CCD are discussed.It is found that the damage occurs at the grid electrode of the device instead of at the light activated elements.The response characteristics of beam whose energy reaches the damage threshold are obtained.The evaluation on radiation damage is given,which ensures the reliability of beam parameters measure of accelerator.
出处 《信息与电子工程》 2012年第2期217-220,共4页 information and electronic engineering
基金 国防科技基础研究基金资助项目(51077119)
关键词 电子束测量 电荷耦合器件图像传感器 激光干扰 损伤阈值 electron beam measure Charge Coupled Devices image sensors laser interference damage threshold
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  • 1杨国君,刘承俊,林郁正,陈思富,张卓.利用光学渡越辐射进行强流束诊断[J].强激光与粒子束,2004,16(9):1215-1218. 被引量:14
  • 2邓建军,何国荣,丁伯南,程念安,姚李兵.3.3MeV LIA强流脉冲电子束能谱测量[J].强激光与粒子束,1993,5(3):353-358. 被引量:8
  • 3杨国君,张卓,陈思富,刘承俊,林郁正.渡越辐射在强流电子束诊断中的应用[J].高能物理与核物理,2005,29(3):305-311. 被引量:7
  • 4江孝国,杨国君,张开志,石金水,邓建军,李勤.光学渡越辐射测量中能量分辨精度分析[J].强激光与粒子束,2005,17(6):956-960. 被引量:7
  • 5[1]Nagarkar V V,Tipnis S V,Gupta T K,et al.High speed X-ray imaging camera using structured CsI(T1) scintillator[C]//IEEETrans.Nucl.Sci.,1998,1:158-162.
  • 6[2]Lazovsky L,Vishnevsky G.Virtual phase CCD images for scientific application[C]//Nuclear instruments and Methodism physics research,1999,387:291-293.
  • 7[3]Janesick J,Ellion T.Sandbox CCDs[C]//Proceedings of SPIE,1995,2415:2-41.
  • 8[4]Damerell C J S.Charge-coupled devices as particle tracking detectors[J].Review of scientific instruments,1998,69(4):1549-1573.
  • 9[5]SHARP公司[EB/OL].[2007-06-08].http://sharp-world.com/products/.
  • 10[6]Granfors P R.Performance characteristics of an amorphous silicon flat panel X-ray imaging cetector[C]//Proceedings of SPIE,1999.3659:480-490.

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