溶剂热法制备CuSe纳米线薄膜

Solvothermal Synthesis of CuSe Nanowires Film

以铜片和硒粉为原料,苯为溶剂,通过调控反应物的配比、反应物浓度、反应温度和反应时间等因素,采用溶剂热法直接在铜基底上制备出六方晶系的硒化铜纳米线薄膜.分别利用X-射线转靶衍射仪(XRD),场发射扫描电子显微镜(FESEM),透射电子显微镜(TEM)表征了产物的晶体结构与形貌,探索了CuSe纳米线薄膜的形成过程,并使用荧光分光光度法(PL)对最终产物的性质进行了表征.实验结果表明:这种CuSe纳米线的直径为100～200 nm,长度为5μm,其荧光发光峰为301 nm.

Hexagonal copper selenide nanowires films on copper substrates have been synthesized via solvothermal reaction by using Cu foil and Se powder as raw materials and benzene as solvent,through changing the molar ratio and concentrations of reactants,temperature and time.The composition and morphology of the as-prepared products were respectively characterized by X-ray diffraction（XRD）,field-emission scanning electron microscopy（FESEM）,transmission electron microscopy（TEM）,the possible formation of copper selenide nanowires film was discussed.The luminescence properties of the final products were characterized fluorospectrophotometry.The results indicate that the as-prepared copper selenide nanowires with the diameter of 100～200 nm and lengths up to 5 μm.The photo-luminescence peaks of copper selenide nanowires films is located at 301 nm.