光子晶体的能态密度及带隙特性

Energy State Density and Bandgap Characteristics of Photonic Crystal

基于平面波展开法数值模拟了硅、锗、磷化铝和氮化镓三代半导体材料构成三角晶格光子晶体的带隙特性,并且验证了文献[3]中这几种材料构成光子晶体能态密度的分布,两者数据吻合较好,研究结果为光子晶体器件的构造提供理论依据。

Based on the plane wave expansion method,numerical simulation of the silicon,germanium,phosphating aluminum and gallium nitride three generations semiconductor material constituted the bandgap characteristics of the triangle photonic crystal,and the energy state density distributions of the several materials composition of photonic crystal in the literature were verified,the both of data were relatively good identical,and the results provided the theory basis for structure of photonic crystal device.