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Nb/A1-AlO_X/Nb隧道结的制备研究 被引量：2

Fabrication on Nb/A1-AlO_X/Nb tunnel junction
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摘要 通过改进RIE的刻蚀工艺和绝缘层的生长工艺,在SiO2/Si衬底上制备出了性能良好的超导Nb/A1-AlOX/Nb隧道结。采用CF4作为刻蚀气体,降低了RIE对结势垒层和衬底SiO2层的刻蚀。使用PECVD生长绝缘层SiO2,改善了绝缘性能,从而降低了隧道结的漏电流。 By improving etching process and insulating layer growth process,we fabricated superconducting tunnel junctions with good performance.In order to decrease the etching of oxide layer and substrate during RIE,CF4 was used as etching gas.SiO2 is grown by using PECVD,to improve the performance of SiO2 insulation layer.Greatly improve the performance of the tunnel junction.
作者 肖伟 曹春海 李梦月 许钦印 卢亚鹏 康琳 许伟伟 陈健 吴培亨
机构地区 南京大学超导电子研究所
出处 《低温与超导》 CAS CSCD 北大核心 2012年第6期1-3,共3页 Cryogenics and Superconductivity
基金 国家自然科学基金(61027008 11074114)项目 国家重点基础研究发展计划项目(2011CBA00202)资助
关键词 Nb/A1-AlOX/Nb 隧道结 制备工艺 Fabrication Tunnel Nb/A1-AlOX/Nb
分类号 TN304.23 [电子电信—物理电子学]
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参考文献11

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二级参考文献12

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共引文献16

同被引文献17

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低温与超导
2012年 第6期

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