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等离子体基离子注入过程中试样温度的预测 被引量:2

Prediction of sample temperature during plasma-based ion implantation
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摘要 建立了等离子体基离子注入过程中试样温度预测的理论模型 ,应用这个模型进行了一系列数学模拟 .以纯铝为例测定了在不同的注入条件下试样的温度变化 ,得到的实验结果与数学模拟相符合 .试验表明 ,低功率注入时 ,系统达到热平衡的时间较长 ,而且热平衡温度低 ;随功率的上升 ,试样升温加快 ;注入功率密度高时 ,试样容易在注入过程中达到平衡温度 ,而且其平衡温度受注入功率的影响较小 ;试样的尺寸也是影响试样温度平衡的一个主要因素 . A theoretic model for prediction of sample temperature during plasma based ion implantation was established, and computer simulation was done with the model. The temperature of pure aluminum sample under different conditions was also measured. The measured value was in good agreement with the calculated value. The result revealed that, when ion implantation occurs at lower power, the time required to achieve the balance temperature is longer. With the increase of power, the increase of temperature is larger. It is easy to achieve the balance temperature for a sample with higher power density, and the power has little effect on the balance temperature. In addition, the size of sample is an important factor on temperature balance.
出处 《哈尔滨工业大学学报》 EI CAS CSCD 北大核心 2000年第1期15-18,共4页 Journal of Harbin Institute of Technology
基金 国家自然科学基金资助项目 !( 5 97710 5 9)
关键词 等离子体 离子注入 计算机模拟 试样 温度预测 plasma based ion implantation temperature computer simulation
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参考文献5

二级参考文献4

  • 1张通和,Surf Coat Technol,1992年,51卷,455页
  • 2张通和,Necl Instr Meth B,1991年,59/60卷,828页
  • 3张通和,北京师范大学学报,1990年,4卷,45页
  • 4张通和,北京师范大学学报,1990年,4卷,53页

同被引文献17

  • 1孙跃,陈继新,夏立芳,刘鑫贵,徐淑艳.等离子体基高温离子注入研究进展[J].材料热处理学报,2001,22(3):55-61. 被引量:1
  • 2G.A.Collins,杨向明.PI^3(等离子浸没离子注入)─—一种新型氮化工艺[J].国外机车车辆工艺,1996(2):12-16. 被引量:1
  • 3Sun G, Dobeli M, Muller A M, et al. Energy loss and straggling of heavy ions in silicon nitride in the low MeV energy range[JJ. Nucl In strum Meth in Phys Res, 2007, B256:586-590.
  • 4Mangiarotti A, Lopes M I, Benabderrahmane M L, et al. A survey of energy loss calculations for heavy ions between 1 and 100 keVJj Nucl Instrum Meth in Phys Res, 2007, A580 : 114-117.
  • 5Liu J, Lennard W N, Lee J K. Range of Er ions in amorphous Si[J]. Applied Surface Science, 2006, 253: 937-943.
  • 6Amekura H, Plaksin O A, Umeda N, et al. Concentration profiles of Zn ions implanted with 60 keV for nanoparticle formation in silica glass [J].Vacuum, 2006, 80:802 805.
  • 7Ziegler J F, Biersack J P, Ziegler M D. Particle interactions with matterDB/OL, www. srim. org,2008.
  • 8Miyagawa Y, Miyagawa S. Computer simulation of ion beam penetration in amorphous target[J. JAppl Phys, 1983, S4(12):7124- 7131.
  • 9Haggmark L G, Wilson W D. A new program for ion implantation by Monte Carlo methodsEJ]. J Nucl Mater, 1978, 14976-77.
  • 10Tian X B, Kwok D T K, Cbu P K. Modeling of incident particle energy distribution in plasma immersion ion imp|antationJ. J Appl Phys, 2000,88(9) :4961-4966.

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