基于有源箝位的IGBT过电压抑制技术

IGBT Overvoltage Suppressing Based on Active Clamping

在介绍绝缘门极双极性晶体管(IGBT)在关断过程中产生过电压原理基础上,分析了传统的过电压抑制方法存在的问题,给出了一种基于有源箝位的IGBT过电压抑制策略。所给出的有源箝位电路由瞬态电压抑制器(TVS)构成,位于IGBT的集电极与门极之间。基于Saber的仿真结果证实了该策略可将IGBT关断时的过电压箝位在瞬态电压抑制器的设定值,能有效地减小IGBT关断时产生的过电压。

Based on introducing the overvoltage in the process of the turn off of the insulated gate bipolar transistor （IGBT）, the problems of the overvoltage suppressing in the conventional gate driver were analyzed, a new strategy of suppressing the overvoltage which is based on active clamping was proposed. The proposed method of active clamping consists of transient voltage suppressor （TVS） which are located between the collector and the gate. The results of the simulation based on Saber verify that the strategy can clamp the overvoltage to the settled value of the TVS in the process of the turn off of the IGBT, and decrease the overvoltage effectively.