摘要
介绍了铁电场效应晶体管 (FFET)的基本结构、存储机制、制作方法 ,综述其结构设计的改进、铁电薄膜在 FFET中应用的进展情况 ,探讨围绕铁电薄膜材料、过渡层、结构设计、不同成膜方法及工艺对 FFET存储特性的影响 ,对
ELECTRONIC COMPONENTS & MATERIALS (China), Vol 19, No 2, P 19 21 (Apr 2000) In Chinese The structure, memory principle and manufacture technology of ferroelectric field effect transistors (FFET) are presented The improvement of FFET structure design and the application of ferroelectric film on FFET are reviewed The effects of ferroelectric film, transition layer, structure and film formation technology on the memory characteristic are discussed The comments on present study on FFET and the exiting problems are also given (19 refs )
出处
《电子元件与材料》
CAS
CSCD
2000年第2期19-21,共3页
Electronic Components And Materials
基金
国家自然科学基金资助项目 !(69771 0 2 4 )
关键词
铁电薄膜
铁电场效应
晶体管
ferroelectric thin film
ferroelectric field effect transistors
memory characteristic
