摘要
用真空反应蒸发技术在有机薄膜衬底上制备出ITO透明导电薄膜 ,对薄膜的低温制备 (80～ 2 4 0℃ )、结构和光电特性进行了研究。制备的薄膜为多晶膜 ,具有纯三氧化二铟的立方铁锰矿结构 ,最佳取向为 (111)方向。薄膜在可见光区的最低电阻率为 6 .6 3× 10 - 4Ω·cm ,透过率达到 82 %。
ITO films have been prepared on polyester substrate by reactive evaporation technique at low substrate temperature.Structural and photoelectric properties of the deposited films are investigated.The deposited films are polycrystalline with cubic bixbyite structure.They exhibit a (111) preferred orientation.High quality films with resistivity as low as 6.63×10 -4 Ω·cm and transmittance of over 82% have been obtained.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2000年第1期46-49,共4页
Semiconductor Optoelectronics
基金
山东省自然科学基金资助项目!(970 310 3)
