摘要
讨论了SiH4 +O2 混合气体在真空紫外光辐照下的光化学反应和SiO2 膜的沉积过程。根据光吸收定律和附面层理论推导出了直接光CVDSiO2 膜的沉积速率方程 ,这个方程与大量实验结果符合较好。
The photo-chemical reaction of mixture of silane(SiH 4) and oxygen(O 2) in vaccum ultra violet light is presented,followed by discussion on the deposition process of SiO 2 films.In terms of the light absorption law and the boundary layer theory,a deposition rate equation of the direct photo-CVD SiO 2 films is deduced for the first time.The equation agrees quite well with the experimental results.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2000年第1期62-65,共4页
Semiconductor Optoelectronics
关键词
真空紫外光
化学汽相沉积
二氧化硅
沉积动力学
photochemical reaction
light absorption
vacuum ultraviolet light
direct photo-CVD
deposition rate
