摘要
采用TE_103单模腔微波炉烧结BaTiO_3系半导体陶瓷,对微波与陶瓷材料相互作用机制进行了探讨,分析了BaTiO_3陶瓷微波结过程中各损耗随温度的变化规律;同时,分别在体系中引入受主杂质Cr^(3+)和施主杂质Nb^(5+),研究微波场中杂质浓度对钛酸钡陶瓷晶粒生长的影响。
BaTiO_3-based semiconducting ceramics were sintered in TE103 single-mode cavity microwave furnace. The mechanism of microwave acting on ceramic materials was studied. Meanwhile,Nb5+ as donor impurity and Cr3+ as acceptor impurity were doped in BaTiO3 ceramics,respectively. The results indicated that the impurities had an obvious effect on grain growth of BaTiO3 ceramics in microwave field. Based on defect chemistry,a reasonable explanation was given on the phenomenon.
出处
《压电与声光》
CSCD
北大核心
2000年第2期107-110,共4页
Piezoelectrics & Acoustooptics
基金
教育部"高等学校骨干教师资助计划"资助项目
关键词
微波场
半导体陶瓷
微波烧结
钛酸钡
microwave field
BaTiO_3-based semiconducting ceramics
microwave sintering
grain growth