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热处理对TbDyFe薄膜性能的影响 被引量:1

TbDyFe thin films annealed at different temperature
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摘要 采用磁控溅射方法利用镶嵌靶材制备非晶TbDyFe薄膜,然后分别在150,300,450,550℃下退火,研究了热处理对TbDyFe薄膜性能的影响.结果显示,550℃温度下退火的样品出现RFe2相.随着退火温度的升高,晶粒逐渐长大,空洞网络变短而宽.薄膜的磁特性显示,其矫顽力及矩磁比均在出现RFe2相的550℃退火的样品中达到最大值.随着退火温度的增加,薄膜的易磁化轴从垂直膜面方向向平行膜面方向转动. The annealing behavior of TbDyFe thin films was investigated. Amorphous thin films were prepared by DC magnetron sputtering deposition from mosaic target. Annealing experiments were performed at 150, 300, 450 and 550 ℃. RFe2 phase was formed when samples were annealed at 550 ℃. Other phases observed were a-Fe, rare earth oxide and some unknown phases. During the annealing treatment, void networks were formed in the grain boundaries, i. e. , the film had a porous structure. The coercivity Hc and the ratio of remnant to saturation magnetization M/M, increased strongly. Preferred in-plane anisotropy was observed at higher annealing temperature.
出处 《物理实验》 2012年第5期9-13,共5页 Physics Experimentation
关键词 磁致伸缩 TbDyFe薄膜 非晶 退火 magnetostriction TbDyFe films amorphous annealing
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