窄线宽可调谐外腔半导体激光器的研究

External Cavity Semiconductor Laser With Narrow-Linewidth and Wavelength Tunable

报道了窄线宽、可调谐外腔半导体激光器的一些研究成果．利用闪耀光栅作反馈元件，对市售的半导体激光器形成弱耦合外腔，改善了半导体激光器的性能，实现了光谱特性较好的窄线宽单模激光输出，其边模抑制比大于３０ｄＢ，线宽小于０．０６ｎｍ．最大输出功率为３５．４ｍＷ，总的光一光转换效率为４６％．通过调整光栅转角，得到１１．６６ｎｍ的波长调谐范围．

Some results of external cavity semiconductor laser with tunable narrow-line are reported in this paper Using a blazed grating to feedback and consisting weak coupled external cavity for a commercial semiconductor laser improved the output characteristics of 808urn semiconductor laser. For the external cavity semiconductor laser with single-longitudinal-mode and narrow-linewidth, we obtained an output power of 35.4 mW and a total optical-to-optical efficiency of 46%. Its side mode suppression ratio is more than 30 dB, and spectrum line width is narrower than 0.06 urn. Through turning the blazed grating. the tuning range of wavelength of l 2.38urn has been achieved.