摘要
在表面外延生长9μm的n型层的磷重掺杂的硅基底n—n＋一Si）结构上沉积约40nm铂（Pt），经氩气保护673K热处理30min作为半导体电极（Pt／n—n＋-Si）。将半导体电极和铁氰化钾、硫酸镍以及硝酸钠的溶液接触，沉积出稳定的铁氰化镍（NiHCF）薄膜。复合电极与Pt电极组成光电化学电池，在零偏电压条件下，通过测量该电池的光电流可检测过氧化氢。通过循环伏安和X-光电子能谱对NiHCF薄膜进行了分析与表征。
Phosphorus heavy doped silicon（n＋-Si） wafers with 9μm epitaxial layer were coated with about 40nm platinum layer, heated at 673K for 30min and then used as a substrate （Pt/n-n＋-Si） for chemical deposition. A NiHCF film was chemically deposited from mixtured solution containing potassium ferricyanide, nickel sulfate and sodium nitrate. The NiHCF modified Pt/n-n＋-Si electrode has been used for determination of hydrogen peroxide （H2O2） with a two-electrode cell in absence reference electrode by photocurrent measurements at a zero bias. The composite modified electrode as a H2O2 sensor was demonstrated with a definite stability. The NiHCF film modified Pt/n-n＋-Si electrode was characterized by cyclic voltammetry and x-ray photoelectron spectroscopy （XPS） measurements.
基金
国家自然科学基金项目（21175084）
关键词
化学沉积
铁氰化镍
光电流
外延硅
过氧化氢
chemical deposition
nickel hexacyanoferrate
photocurrent
epitaxial silicon
hydrogen peroxide
