摘要
采用有效质量方法 ,计算了夹在两无限宽势垒层Al0 4Ga0 6As中的单个斜量子阱AlxGa1 -xAs中的束缚态电子包络函数和能级 ,并讨论了阱宽对能级的影响。
The electronic wave function envelop and energy levels of bound state in the single graded quantum well Al xGa 1-x As between two infinite Al 0 4 Ga 0 6 As barriers is calculated by means of effective mass method, and the effect of well width on energy levels is also discussed.
关键词
电子态
斜量子阱
有效质量方法
electronic states
graded quantum well
effective mass method
