InGaAs/InAlAs RTD I-V特性的量子力学隧穿模拟

Current-voltage characteristics of InGaAs/InAlAs RTD via quantum mechanical tunneling

本文通过数值求解含时Schrodinger方程得到了InGaAs/InAlAs共振隧穿二极管 (RTD)的电流 偏压曲线 ,我们发现数值模拟的结果与实验符合得很好。

The current voltage(I V) characteristics for InGaAs/InAlAs RTD are computed numerically by solving the time dependent Schrodinger equation. The results are good agreement with the experiment.