Au纳米粒子自组装体系的数值模拟

The Numerical Simulation of Au Nanoparticle Selfassembly Systems

本文对形成室温单电子现象的典型隧道结结构模型利用 WKB方法求解薛定谔方程计算其隧穿电流与偏压的关系。本文利用该方法对 Au纳米粒子组装体系在室温下的 I- V特性进行了计算机模拟 ,发现结果与实验符合得很好。该方法对于进一步指导纳米电子器件的实验及其原型化有重要意义。

In this letter, the current-voltage characteriazation of a standard tunneling junctions which forms room temperature single electron devices is computed by the solution of Schrodinger equation using WKB method. The current-voltage characterization of Au nanoparticles selfassembly systems at room temperature is simulated numerically. We find the numerically results are in good agreement with the experimental results. The numerical method has important meaning in the experiment and realization of the nanometer devices.