高速SOI-LIGBT的数值分析

Numerical Analysis of High Speed SOI-LIGBT

研制出Ｈｅ离子注入局域寿命控制ＳＯＩ横向绝缘栅双极晶体管（ＳＯＩ－ＬＩＧＢＴ），有效地提高了器件的关断速度，且与集成电路工艺相兼容。数值模拟表明，该器件的t_f～V_F折衷关系优于采用非局域寿命控制的器件，在相同关断速度下其正向压降可降低０．６～１．４ Ｖ，避免了阳极短路结构的正向快速返回现象。

He ion implantation localized lifetime control SOI lateral insulated gate bipolar transistor (SOI-LIGBT) is proposed in this paper, which can effectively raise the turn-off speed of devices, which is compatibles with integrated circuit process. It is demonstrated by numerical simulation that the trade- off is superior to the devices using unlocalized lifetime control, the forward on-state voltage can be reduced by 0.6-1.4 V at the same turn-off speed, and it can avoid the snap-back phenomena of anode-short structure.