基体温度对碳氮薄膜成分和结构的影响

Effect of Substrate Temperature on the Composition and Structure of Carbon Nitride Thin Films

采用微波等离子体化学气相沉积法，Ｎ_２／ＣＨ_４作反应气体，在 Ｓｉ（１００）基体上沉积β－Ｃ_３Ｎ_４ 化合物．使用Ｘ射线光电子能谱（ＸＰＳ）研究了基体温度对碳氮薄膜的成分和结构的影响，结果 表明：随着温度的提高，Ｎ／Ｃ原子比迅速提高，ａ一和Ｃ_３Ｎ_４在薄膜中的比例随之提高，超过一定 的温度后，Ｎ／Ｃ原子比将会降低．傅立叶变换红外光谱（ＦＴ－ＩＲ）和喇曼（Ｒａｍａｎ）谱结果支持 Ｃ－Ｎ 键的存在．

The carbon nitride thin films have been prepared on Si substrates, using N,/CH. as reactive gases, by microwave chemical vapor deposition method. The effect of substrate temperature on the composition and structure of carbon nitride thin films were studied by X-ray photoelectron spectroscopy (XPS). As the substrate temperature increased, the N/C atomic ratios increased rapidly first and then decreased a little after a crucial temperature. Fourier transform infrared (FT-IR) and Raman spectra support the existence of C-N covalent bond.